Chengxu Zhang

Title: Chengxu Zhang: Innovator in Storage Device Technology

Introduction

Chengxu Zhang is a notable inventor based in Nanjing, China. He has made significant contributions to the field of storage device technology, particularly in the area of 3D NAND architecture. His innovative approach addresses critical challenges in data retention and efficiency.

Latest Patents

Chengxu Zhang holds a patent titled "Mitigating Edge Layer Effect in Partially Written Blocks." This invention involves a storage device that includes 3D NAND with layers of multi-level cells. The patent outlines a method for evaluating whether a block is partially written upon receiving a shutdown command. If a block is found to be partially written, dummy lines are written after the last written wordline of the block. This technique is particularly useful for blocks with a fill percentage below a certain threshold, which is determined by the PEC count of the block. Additionally, if the maximum retention time is exceeded for data in a partially written block, dummy lines may also be written to enhance data integrity.

Career Highlights

Chengxu Zhang is currently employed at Petaio Inc., where he continues to develop innovative solutions in storage technology. His work has garnered attention for its practical applications in improving data storage reliability and performance.

Collaborations

Chengxu collaborates with talented professionals in his field, including Naveen Kumar and Seok Lee. Their combined expertise contributes to the advancement of technology at Petaio Inc.

Conclusion

Chengxu Zhang's contributions to storage device technology exemplify the impact of innovative thinking in addressing modern challenges. His patent on mitigating edge layer effects showcases his commitment to enhancing data storage solutions.