The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2024
Filed:
Oct. 12, 2021
Applicant:
Petaio Inc., Santa Clara, CA (US);
Inventors:
Naveen Kumar, San Jose, CA (US);
Chengxu Zhang, NanJing, CN;
Seok Lee, San Jose, CA (US);
LingQi Zeng, San Jose, CA (US);
Assignee:
PETAIO INC., Santa Clara, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G11C 16/10 (2006.01); G11C 29/42 (2006.01); G11C 16/28 (2006.01); G11C 16/06 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3495 (2013.01); G11C 16/06 (2013.01); G11C 16/102 (2013.01); G11C 16/28 (2013.01); G11C 29/42 (2013.01);
Abstract
A storage device includes 3D NAND including layers of multi-level cells. When a shutdown command is received, whether a block is partially written is evaluated. If so, dummy lines are written after the last written wordline of the block. Partially written blocks may be those having a fill percentage less than a threshold. The threshold may be a function of the PEC count of the block. If a maximum retention time is exceeded by data stored in a partially written block, dummy lines may also be written to the block.