Chengjun Zhang

Title: Chengjun Zhang and Semiconductor Light-Emitting Technology.

Introduction

Chengjun Zhang is an inventor based in Xiamen, China, associated with Xiamen Silan Advanced Compound Semiconductor Co., Ltd. His patent work concerns semiconductor light-emitting devices and methods for manufacturing them.

Latest Patents

Zhang is credited with 1 patent: “Semiconductor Light Emitting Element and Manufacture Method Thereof.” The invention describes a device built from a substrate, n-type semiconductor layer, quantum well layer, and p-type semiconductor layer. It also incorporates surface-plasmon-related layers in specified positions within or above the semiconductor structure. The patent presents these arrangements as a way to improve quantum efficiency, light-emission uniformity, and resistance to electrostatic discharge.

Career Highlights

Zhang’s listed patent reflects work in compound-semiconductor technology, particularly the design and manufacture of light-emitting elements. His association with Xiamen Silan Advanced Compound Semiconductor Co., Ltd. connects his inventive work with a company focused on advanced semiconductor materials and devices.

Collaborations

Jinjian Zheng and Moran Gao are identified as Zhang’s coworkers. The available information does not specify their roles in the patent or describe particular joint projects.

Conclusion

Chengjun Zhang’s recorded invention focuses on improving the efficiency, uniformity, and durability of semiconductor light-emitting elements through surface-plasmon-related layer arrangements.