Chengcheng Wang

Title: Chengcheng Wang: Innovator in Semiconductor Technology

Introduction

Chengcheng Wang is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology, particularly in non-volatile memory devices. With a total of 2 patents, his work has advanced the efficiency and functionality of memory cells.

Latest Patents

Chengcheng Wang's latest patents include "Flash with shallow trench in channel region and method for manufacturing the same." This invention discloses a flash memory design that incorporates a channel region with a first shallow trench in a semiconductor substrate. The design features a tunneling dielectric layer and a polysilicon floating gate, which are crucial for enhancing memory cell performance. His second patent, "Method of preventing drain and read disturbances in non-volatile memory device," outlines a source-drain structure that minimizes electric field effects, thereby improving the reliability of memory devices.

Career Highlights

Throughout his career, Chengcheng Wang has worked with notable companies such as Shanghai Huali Microelectronics Corporation and Semiconductor Manufacturing International Corporation. His experience in these organizations has allowed him to refine his expertise in semiconductor manufacturing and innovation.

Collaborations

Chengcheng has collaborated with talented individuals in the field, including Rong Zou and Qiwei Wang. These partnerships have contributed to the development of cutting-edge technologies in the semiconductor industry.

Conclusion

Chengcheng Wang's contributions to semiconductor technology through his innovative patents and collaborations highlight his role as a key figure in advancing memory device efficiency. His work continues to influence the industry and pave the way for future innovations.