Cheng-Yi Peng

Title: Cheng-Yi Peng: Innovator in Semiconductor Technology

Introduction

Cheng-Yi Peng is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique patent that enhances the efficiency of semiconductor devices.

Latest Patents

Cheng-Yi Peng holds a patent titled "Device having extended source/drain contact and method." This patent describes a method that includes forming a stack of semiconductor nanostructures on a semiconductor fin. It also involves creating a source/drain opening adjacent to the stack and forming a source/drain region in the opening. The method emphasizes the importance of a void present between the source/drain region and the bottom dielectric layer. Additionally, it details the formation of a hardened portion of the dielectric layer, which has higher etch selectivity than other portions. The patent outlines the steps to expose the void and connect it with a source/drain contact opening, ultimately enhancing the performance of semiconductor devices.

Career Highlights

Cheng-Yi Peng is currently employed at Taiwan Semiconductor Manufacturing Co., Ltd. His work at this leading semiconductor company has allowed him to collaborate with other talented professionals in the industry. His contributions have been instrumental in advancing semiconductor technology.

Collaborations

Cheng-Yi Peng has worked closely with his coworker, Chih-Hao Chang. Their collaboration has fostered innovation and development in semiconductor applications.

Conclusion

Cheng-Yi Peng is a prominent figure in the semiconductor industry, with a focus on innovative methods that improve device performance. His patent and work at Taiwan Semiconductor Manufacturing Co., Ltd. highlight his commitment to advancing technology in this critical field.