Hsinchu, Taiwan

Cheng-Tying Yen


Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 13(Granted Patents)


Company Filing History:


Years Active: 2009

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1 patent (USPTO):Explore Patents

Title: Cheng-Tying Yen: Innovator in Magnetic Memory Technology

Introduction

Cheng-Tying Yen is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of magnetic memory devices, showcasing his expertise and innovative spirit. His work has implications for improving data processing efficiency in modern technology.

Latest Patents

Cheng-Tying Yen holds a patent for a magnetic memory device. This device includes a substrate, a magnetic tunneling junction (MTJ) structure disposed on the substrate, and a capping layer placed on the MTJ structure. The addition of the capping layer enhances the properties of the magnetic memory device, resulting in an increased magnetoresistance (MR) ratio. Furthermore, this innovation effectively reduces the time required for the magnetic memory device to process data.

Career Highlights

Cheng-Tying Yen is affiliated with the Industrial Technology Research Institute, where he continues to advance research in magnetic memory technology. His work is characterized by a commitment to innovation and excellence in the field.

Collaborations

Cheng-Tying Yen has collaborated with notable colleagues, including Chih-Ta Shen and Yung-Hung Wang. Their combined efforts contribute to the advancement of technology in their respective fields.

Conclusion

Cheng-Tying Yen is a prominent figure in the realm of magnetic memory technology, with a patent that significantly enhances data processing capabilities. His contributions reflect a dedication to innovation and collaboration in the technology sector.

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