The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2009
Filed:
Jun. 18, 2007
Chih-ta Shen, Hsinchu, TW;
Yung-hung Wang, Hsinchu, TW;
Cheng-tying Yen, Hsinchu, TW;
Kuei-hung Shen, Hsinchu, TW;
Wei-chuan Chen, Hsinchu, TW;
Shan-yi Yang, Hsinchu, TW;
Chih-Ta Shen, Hsinchu, TW;
Yung-Hung Wang, Hsinchu, TW;
Cheng-Tying Yen, Hsinchu, TW;
Kuei-Hung Shen, Hsinchu, TW;
Wei-Chuan Chen, Hsinchu, TW;
Shan-Yi Yang, Hsinchu, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A magnetic memory device includes a substrate, a magnetic tunneling junction (MTJ) structure disposed on the substrate, and a capping layer disposed on the MTJ structure. By adding a capping layer on the MTJ structure, the property of the magnetic memory device is improved, the magnetoresistance (MR) ratio is raised, and the time cost by the magnetic memory device to process data is effectively reduced.