Cheng-Ta Wei

Title: Innovations of Cheng-Ta Wei in CMOS Technology

Introduction

Cheng-Ta Wei is a notable inventor based in Taoyuan, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative work on complementary metal-oxide semiconductor (CMOS) devices. His expertise and inventions have paved the way for advancements in electronic circuits.

Latest Patents

Cheng-Ta Wei holds a patent for a complementary metal-oxide semiconductor device. This device employs circuit conversion to achieve coexistent multiple voltage levels without the body effect. The CMOS device is formed by a typical twin-well process and includes both high voltage and low voltage CMOS components, along with a circuit converter. The circuit converter is designed to raise the operation voltage of the low voltage PMOS in the low voltage CMOS to match that of the high voltage PMOS in the high voltage CMOS. Alternatively, it can reduce the operation voltage of the low voltage NMOS in the low voltage CMOS to align with the high voltage NMOS in the high voltage CMOS. This innovative design effectively prevents the body effect from occurring in the CMOS device.

Career Highlights

Cheng-Ta Wei is currently associated with Integrated Technology Express Inc., where he continues to develop and refine semiconductor technologies. His work has been instrumental in enhancing the performance and efficiency of CMOS devices, making them more versatile for various applications.

Collaborations

Due to space constraints, the details of collaborations will not be included.

Conclusion

Cheng-Ta Wei's contributions to CMOS technology exemplify the innovative spirit of modern inventors. His patent reflects a significant advancement in semiconductor design, showcasing his expertise and commitment to technological progress.