Company Filing History:
Years Active: 2016
Title: Innovations of Cheng-Long Tao in Shallow Trench Isolation Structures
Introduction: Cheng-Long Tao, an innovative inventor based in Hsindian, Taiwan, has made significant contributions to the field of semiconductor manufacturing. With a keen focus on enhancing substrate isolation techniques, his work has paved the way for advancements in electronic device fabrication.
Latest Patents: Cheng-Long Tao holds a patent for a method of forming a shallow trench isolation (STI) structure. The patented method outlines a systematic approach to constructing a STI structure within a substrate, which includes the formation of a pad oxide layer, followed by a nitride-containing layer. This invention establishes key correlations between the thickness of the nitride layer and the final height of the STI structure, optimizing the isolation process for improved device performance.
Career Highlights: Currently, Cheng-Long Tao is associated with Taiwan Semiconductor Manufacturing Company (TSMC), a global leader in semiconductor manufacturing. His expertise and innovative methods have contributed to the manufacturing of state-of-the-art semiconductor devices, enhancing productivity and performance in the industry.
Collaborations: Throughout his career, Cheng-Long Tao has collaborated with esteemed colleagues such as Tai-Yung Yu and Hui Mei Jao. These partnerships have fostered a dynamic environment of innovation and research, further driving advancements in semiconductor technologies.
Conclusion: Cheng-Long Tao's contributions to the development of shallow trench isolation methods mark him as a notable inventor in the semiconductor industry. His work not only reflects his technical expertise but also highlights the importance of innovation in developing efficient manufacturing processes for electronic devices.