Cheng Hsiang Chen

Title: Cheng Hsiang Chen and Over-Current Protection Technology.

Introduction

Cheng Hsiang Chen is an inventor associated with Luzhu, Taiwan, and Polytronics Technology Corporation. His patent work includes an over-current protection device designed to withstand spot-welding while protecting its PTC component.

Latest Patents

Chen is credited with 1 patent, titled “Over-current protection device.” The invention combines a positive temperature coefficient (PTC) device with first and second electrodes and welding metal plates. The PTC device has two conductive layers with a PTC polymeric material layer laminated between them. Each electrode connects to a different conductive layer, and the electrodes are electrically separated.

The welding metal plates connect to their respective electrodes and are positioned at opposite ends of the strip-like structure. One plate is formed on the device’s upper surface, while the other may be formed on either its upper or lower surface. Their thickness is designed to allow spot-welding without significant damage to the PTC device.

Career Highlights

Chen’s listed invention addresses the practical challenge of attaching a protection device through spot-welding while preserving the integrity of its PTC component. His work is associated with Polytronics Technology Corporation.

Collaborations

Chen’s listed coworkers include Chi Jen Su and Pin Syuan Li. The available information does not specify their roles in the patent or their particular contributions.

Conclusion

Cheng Hsiang Chen’s patent describes a spot-weldable over-current protection device that combines a PTC structure with reinforced welding connections.