This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Taiwan Semiconductor Manufacturing Co., Ltd.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Cheng-Han Lee: Innovator in Semiconductor Technology
Introduction
Cheng-Han Lee is a prominent inventor based in New Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of gate structures. His innovative work has led to the filing of a patent that showcases his expertise and creativity in this highly technical area.
Latest Patents
Cheng-Han Lee holds a patent titled "Methods of forming gate structures with uniform gate length." This patent describes a device that includes a first gate region with a specific gate length, a first spacer on its sidewall, and a semiconductor layer positioned above it. Additionally, the invention features a second gate region that mirrors the first in gate length, along with a wider second spacer on its sidewall. This innovation is crucial for enhancing the performance and reliability of semiconductor devices.
Career Highlights
Cheng-Han Lee is currently employed at Taiwan Semiconductor Manufacturing Co., Ltd., a leading company in the semiconductor industry. His role at this prestigious organization allows him to work on cutting-edge technologies and contribute to advancements in semiconductor manufacturing processes.
Collaborations
Cheng-Han Lee has collaborated with notable colleagues, including Shahaji B More and Shih-Chieh Chang. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas within the field.
Conclusion
Cheng-Han Lee's contributions to semiconductor technology through his patent and work at Taiwan Semiconductor Manufacturing Co., Ltd. highlight his role as an influential inventor. His innovative methods for forming gate structures are paving the way for advancements in the industry.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile