Cheng-Chin Huang

Title: Innovations of Cheng-Chin Huang

Introduction

Cheng-Chin Huang is a notable inventor based in Plano, TX, who has made significant contributions to the field of semiconductor technology. With a total of four patents to his name, he has developed innovative devices that enhance the performance and efficiency of power electronics.

Latest Patents

One of his latest patents is the Self-aligned dual trench device. This invention allows for the fabrication of a power MOSFET or a power rectifier that includes a gate trench and a field plate trench. Both trenches can be formed using a two-step etching process, which is detailed in the patent specification. The devices that embody this invention can be fabricated with higher packaging density and better, more tightly distributed device parameters such as voltage (V), resistance (R), and breakdown voltage (BV).

Career Highlights

Cheng-Chin Huang has worked with prominent companies in the industry, including Diodes Inc. and the Industrial Technology Research Institute. His experience in these organizations has contributed to his expertise in semiconductor device fabrication and innovation.

Collaborations

Some of his notable coworkers include Chiao-Shun Chuang and Kai-Yu Chen, who have collaborated with him on various projects throughout his career.

Conclusion

Cheng-Chin Huang's contributions to the field of power electronics through his patents and collaborations highlight his role as an influential inventor. His work continues to impact the development of advanced semiconductor technologies.