The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2014
Filed:
Dec. 26, 2012
Industrial Technology Research Institute, Hsin-Chu, TW;
Cheng-Tyng Yen, Kaohsiung, TW;
Young-Shying Chen, Hsinchu, TW;
Chien-Chung Hung, Hsinchu, TW;
Chwan-Ying Lee, Hsinchu, TW;
Chiao-Shun Chuang, Hsinchu, TW;
Kai-Yu Chen, Shanghai, CN;
Cheng-Chin Huang, Taichung, TW;
Industrial Technology Research institute, Hsin-Chu, TW;
Abstract
A SiC-based trench-type Schottky device is disclosed. The device includes: a SiC substrate having first and second surfaces; a first contact metal formed on the second surface and configured for forming an ohmic contact on the substrate; a drift layer formed on the first surface and including a cell region and a termination region enclosing the cell region; a plurality of first trenches with a first depth formed in the cell region; a plurality of second trenches with a second depth less than the first depth; a plurality of mesas formed in the substrate, each defined between neighboring ones of the trenches; an insulating layer formed on sidewalls and bottoms of the trenches; and a second contact metal formed on the mesas and the insulating layer, extending from the cell region to the termination region, and configured for forming a Schottky contact on the mesas of the substrate.