Cheng-Cheng Hu

Title: Cheng-Cheng Hu: Innovator in Semiconductor Technology

Introduction

Cheng-Cheng Hu is a notable inventor based in Colorado Springs, CO (US). He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent related to CMOS processes. His work has implications for the efficiency and effectiveness of dynamic RAM structures.

Latest Patents

Cheng-Cheng Hu holds a patent for a "Thick oxide field-shield CMOS process." This invention discloses an improved semiconductor structure and method for fabrication. The focus of the invention is on utilizing thick-oxide for enhanced field-shield isolation, especially in dynamic RAM applications. The improved structure offers increased isolation characteristics between adjacent memory cells while allowing for reduced spacing between them. The process involves etching to determine cell spacing and simplifies fabrication by using a single mask for multiple purposes, including defining active transistor areas and the first polysilicon layer. Additional advantages include a higher body effect in isolation transistors, the use of a nitride dielectric layer, and a stable threshold voltage in these transistors. Modifications for the fabrication of both P-channel and N-channel devices are also possible.

Career Highlights

Cheng-Cheng Hu is associated with Inmos Limited, where he has contributed to advancements in semiconductor technology. His work has been instrumental in developing processes that enhance the performance and reliability of memory devices.

Collaborations

Cheng-Cheng Hu has collaborated with S Sheffield Eaton, Jr., furthering the research and development of innovative semiconductor solutions.

Conclusion

Cheng-Cheng Hu's contributions to semiconductor technology, particularly through his patent on thick oxide field-shield CMOS processes, highlight his role as an innovator in the field. His work continues to influence the design and fabrication of advanced memory devices.