This inventor holds 1 USPTO granted patent. Top assignee: New V-Key Technology Co., Ltd.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Cheng-change Hsieh and His Anti-Noise Electrode Connector Patent.
Introduction
Cheng-change Hsieh is an inventor based in New Taipei, Taiwan. His work includes an invention designed to reduce noise in an electrode connector.
Latest Patents
Hsieh is associated with 1 patent, titled “Anti-noise electrode connector and method for manufacturing the same.” The invention describes a connector with an electrode snap socket and a shielded wire. Its structure includes inner and outer insulating layers and an anti-noise layer that covers the inner insulation and an exposed section of the wire’s metal shielding. The patent also describes a manufacturing method for the connector.
Career Highlights
Hsieh is associated with New V-Key Technology Co., Ltd. His patent focuses on the construction and manufacture of an electrode connector intended to address electrical noise.
Collaborations
Hsieh’s listed coworker is Kohei Ono. The available information does not specify their particular projects or working relationship.
Conclusion
Cheng-change Hsieh’s patent documents an electrode connector design that combines shielding and layered insulation to help reduce noise.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile