Chen Tsan Ying

Title: Innovations of Chen Tsan Ying in Semiconductor Technology

Introduction

Chen Tsan Ying is a notable inventor based in Cupertino, CA (US). He has made significant contributions to the field of semiconductor technology, particularly in the patterning of lead zirconium titanate (PZT) and barium strontium titanate (BST) materials. His innovative methods have implications for the development of advanced electronic devices.

Latest Patents

Chen Tsan Ying holds a patent for a method of patterning lead zirconium titanate and barium strontium titanate. This patent describes a process where PZT or BST layers are plasma etched using a high-temperature-compatible mask, such as titanium nitride (TiN). The method utilizes boron trichloride (BCl) or silicon tetrachloride (SiCl) as primary etchants, often in combination with inert gases like argon. The selectivity of the etching process is impressive, with a ratio of etch rates exceeding 20:1 between the PZT film and the TiN mask. This innovation allows for precise patterning without contaminating the semiconductor devices.

Career Highlights

Chen Tsan Ying is associated with Applied Materials, Inc., a leading company in the semiconductor industry. His work focuses on enhancing the manufacturing processes of electronic components, contributing to the advancement of technology in this field. With a patent count of 1 patent, his contributions are recognized within the industry.

Collaborations

Chen has collaborated with notable colleagues, including Jeng H Hwang and Yohei Kawase. Their combined expertise has likely fostered innovative solutions in semiconductor technology.

Conclusion

Chen Tsan Ying's work exemplifies the spirit of innovation in the semiconductor industry. His patented methods for patterning PZT and BST materials are crucial for the development of next-generation electronic devices. His contributions continue to influence advancements in technology.