Location History:
- Kaohsiung County, TW (2011)
- Kaohsiung, TW (2014)
Company Filing History:
Years Active: 2011-2014
Title: Innovations of Chen-Shuo Huang in Semiconductor Technology
Introduction
Chen-Shuo Huang is a notable inventor based in Kaohsiung, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the area of germanium-based materials. With a total of 2 patents, his work focuses on improving the performance and reliability of semiconductor devices.
Latest Patents
One of his latest patents is titled "Method for removing germanium suboxide." This innovative method involves using a supercritical fluid composition that includes supercritical carbon dioxide and an oxidant to effectively remove germanium suboxide from a germanium substrate. The process facilitates a redox reaction that reduces germanium suboxide into pure germanium, enhancing the quality of the semiconductor interface. Another significant patent is "Method for forming an interfacial passivation layer on the Ge semiconductor." This invention utilizes supercritical CO2 fluids to create an interfacial passivation layer between the germanium channel and the gate insulator layer, thereby improving the dielectric characteristics of the gate insulator after high-temperature thermal annealing.
Career Highlights
Chen-Shuo Huang is affiliated with National Yang Ming Chiao Tung University, where he conducts research and development in semiconductor technologies. His academic background and research initiatives have positioned him as a key figure in advancing semiconductor materials and processes.
Collaborations
He has collaborated with notable colleagues such as Po-Tsun Liu and Yi-Ling Huang, contributing to various research projects and innovations in the semiconductor field.
Conclusion
Chen-Shuo Huang's contributions to semiconductor technology through his patents and research at National Yang Ming Chiao Tung University highlight his role as an influential inventor in the industry. His innovative methods for enhancing germanium-based materials are paving the way for advancements in semiconductor applications.