The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2011
Filed:
Nov. 24, 2010
Po-tsun Liu, Hsinchu, TW;
Chen-shuo Huang, Kaohsiung County, TW;
Yi-ling Huang, Taipei County, TW;
Szu-lin Cheng, Kaohsiung, TW;
Simon M. Sze, Hsinchu, TW;
Yoshio Nishi, Stanford, CA (US);
Po-Tsun Liu, Hsinchu, TW;
Chen-Shuo Huang, Kaohsiung County, TW;
Yi-Ling Huang, Taipei County, TW;
Szu-Lin Cheng, Kaohsiung, TW;
Simon M. Sze, Hsinchu, TW;
Yoshio Nishi, Stanford, CA (US);
National Chiao Tung University, Hsinchu, TW;
Abstract
The invention discloses a method for forming an interfacial passivation layer on the Ge semiconductor. The supercritical COfluids is used to form an interfacial passivation layer between Ge channel and gate insulator layer, and improve the dielectric characteristics of gate insulator after high-temperature thermal annealing process.