Nanjing, China

Chen Gong

This inventor holds 1 USPTO granted patent. Top assignee: Applied Materials, Inc.. Active years: 2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chen Gong. Retrieved from https://idiyas.com/inventor/chen-gong-jpn0a2hf

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 7.0

ph-index = 1


Company Filing History:


Years Active: 2024

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1 patent (USPTO):Explore Patents

Title: Biography of Inventor Chen Gong

Introduction: Chen Gong is a notable inventor based in Nanjing, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of methods for interconnect structures.

Latest Patents: Chen holds a patent for "Methods and devices for subtractive self-alignment." This patent describes a method of forming an interconnect structure for semiconductor devices. The method involves depositing an etch stop layer on a substrate through physical vapor deposition, followed by in situ deposition of a metal layer on the etch stop layer. The process ensures that the substrate remains under vacuum and is not exposed to ambient air during the deposition.

Career Highlights: Chen Gong is currently employed at Applied Materials, Inc., a leading company in the semiconductor industry. His work focuses on innovative techniques that enhance the manufacturing processes of semiconductor devices.

Collaborations: Throughout his career, Chen has collaborated with talented professionals such as He Ren and Hao Jiang. These collaborations have contributed to the advancement of technology in their field.

Conclusion: Chen Gong's contributions to semiconductor technology through his innovative patent and collaborations highlight his role as a significant inventor in the industry. His work continues to influence the development of advanced semiconductor manufacturing techniques.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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