Nanjing, China

Chen Di

This inventor holds 1 USPTO granted patent. Top assignee: Nanjing University. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chen Di. Retrieved from https://idiyas.com/inventor/chen-di

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Average Co-Inventor Count = 1.0

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Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Chen Di and Thermal Boundary Conductance Regulation.

Introduction

Chen Di is an inventor associated with Nanjing University in Nanjing, China. His patent work addresses ways to regulate heat transfer across the boundary between a metal and an insulator. The available information identifies 1 patent.

Latest Patents

Chen Di’s listed patent is “Method for Regulating Thermal Boundary Conductance Between Metal and Insulator.” It describes placing a metal on an insulator’s surface and controlling the thermal boundary conductance at their contact interface.

The method uses an insulator containing a ferroelectric, piezoelectric, or pyroelectric material. For a ferroelectric, an external electric field or stress can be adjusted in magnitude or direction relative to the boundary. For a piezoelectric, the method adjusts the magnitude or direction of applied stress. For a pyroelectric, it regulates conductance by changing temperature.

Career Highlights

The patent reflects Chen Di’s work on controlling thermal transport at material interfaces. Its proposed approaches use electrical, mechanical, or temperature-based adjustments, depending on the insulator’s properties.

Collaborations

Chen Di is associated with Nanjing University. The provided information also names Yuefeng Nie and Yipeng Zang as coworkers.

Conclusion

Chen Di’s listed invention presents several ways to tune thermal boundary conductance between metals and insulators, highlighting a materials-focused contribution to thermal management.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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