Company Filing History:
Years Active: 2002-2003
Title: Innovations by Inventor Chau M Ho
Introduction
Chau M Ho is a notable inventor based in San Mateo, CA (US). He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on methods that enhance the manufacturing processes of non-volatile memory devices and vertical field effect transistors.
Latest Patents
Chau M Ho's latest patents include innovative methods that improve semiconductor device fabrication. One of his patents is titled "Methods to form reduced dimension bit-line isolation in the manufacture of non-volatile memory devices." This method involves a unique process of silylating a layer of image-sensitive photoresist, which causes the opening dimension to decrease, thereby enhancing the bit-line isolation dimension. Another significant patent is "Method of making vertical field effect transistor having channel length determined by the thickness of a layer of dummy material." This invention outlines a detailed process for fabricating a vertical field effect transistor, which includes the deposition of multiple layers of doped insulating material and the etching of openings to form a gate electrode.
Career Highlights
Chau M Ho is currently employed at Advanced Micro Devices Corporation, a leading company in the semiconductor industry. His work at AMD has allowed him to contribute to cutting-edge technologies that are pivotal in the development of modern electronic devices.
Collaborations
Chau has collaborated with several talented individuals in his field, including Allen S Yu and Paul J Steffan. These collaborations have fostered an environment of innovation and have led to the successful development of advanced semiconductor technologies.
Conclusion
Chau M Ho's contributions to semiconductor technology through his patents and work at Advanced Micro Devices Corporation highlight his role as an influential inventor in the industry. His innovative methods continue to shape the future of non-volatile memory devices and vertical field effect transistors.