Chau-Hwa J Yang

Title: Chau-Hwa J Yang: Innovator in Plasma Etching Technology

Introduction

Chau-Hwa J Yang is a notable inventor based in Hopewell Junction, NY (US). She has made significant contributions to the field of plasma etching technology, holding 2 patents that showcase her innovative approaches.

Latest Patents

Her latest patents include a selective silicon nitride plasma etching process. This two-step method involves etching a silicon nitride layer that carries a surface oxygen film from a substrate in a plasma reactor. The first step is a breakthrough step that employs a plasma of oxygen-free etchant gases to remove the surface oxygen-containing film from the silicon nitride layer. The second step involves etching the newly exposed silicon nitride with etchant gases that have high selectivity with respect to the silicon oxide underlying the silicon nitride. The process can be enhanced using magnetic fields and is performed in a low-pressure, single-wafer plasma reactor. The etchant gases used include halides such as bromides and fluorides in the breakthrough step, and oxygen and bromine-containing gases in the main step.

Career Highlights

Chau-Hwa J Yang is currently associated with the International Business Machines Corporation (IBM), where she continues to advance her research and development in plasma etching technologies.

Collaborations

She has collaborated with notable coworkers, including Wayne T Babie and Kenneth L DeVries, contributing to a dynamic research environment.

Conclusion

Chau-Hwa J Yang's work in plasma etching technology exemplifies her innovative spirit and dedication to advancing the field. Her contributions are significant and continue to influence the industry.