Saint Peters, MO, United States of America

Charles Whitmer, Ii

This inventor holds 1 USPTO granted patent. Top assignee: Memc Electronic Materials, Inc.. Active years: 2001.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Charles Whitmer, Ii. Retrieved from https://idiyas.com/inventor/charles-whitmer-ii

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 12(Granted Patents)


Company Filing History:


Years Active: 2001

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1 patent (USPTO):Explore Patents

Title: The Innovations of Charles Whitmer, II

Introduction

Charles Whitmer, II is an accomplished inventor based in St. Peters, Missouri. He has made significant contributions to the field of semiconductor technology, particularly in the area of silicon crystal growth. His innovative approach has led to advancements that benefit the electronics industry.

Latest Patents

Whitmer holds a patent for a "Multi-stage arsenic doping process to achieve low resistivity in silicon crystal grown by Czochralski method." This method involves lowering the resistivity of resultant silicon crystals from a Czochralski crystal growing process by adding arsenic dopant to the melt in multiple stages. This innovation is crucial for enhancing the performance of silicon-based electronic devices.

Career Highlights

Whitmer is currently employed at MEMC Electronic Materials, Inc., where he continues to work on cutting-edge technologies in semiconductor manufacturing. His expertise in the field has positioned him as a valuable asset to his company and the industry at large.

Collaborations

Throughout his career, Whitmer has collaborated with notable colleagues, including Mohsen Banan and Milind S. Kulkarni. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Charles Whitmer, II exemplifies the spirit of innovation in the semiconductor industry. His contributions, particularly in the area of silicon crystal growth, have paved the way for advancements that enhance electronic device performance. His work continues to impact the field positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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