North Richland Hills, TX, United States of America

Charles E Rainey, Jr

This inventor holds 1 USPTO granted patent. Top assignee: Graham Magnetics Incorporated. Active years: 1985.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Charles E Rainey, Jr. Retrieved from https://idiyas.com/inventor/charles-e-rainey-jr

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 1.0

ph-index = 1

Forward Citations = 9(Granted Patents)


Company Filing History:


Years Active: 1985

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1 patent (USPTO):Explore Patents

Title: Charles E Rainey, Jr: Innovator in Fastener-Free Baffle Assembly Systems

Introduction

Charles E Rainey, Jr. is an accomplished inventor based in North Richland Hills, TX (US). He has made significant contributions to the field of engineering, particularly with his innovative designs that enhance efficiency and functionality in various applications.

Latest Patents

Rainey holds a patent for a "Fastener-free baffle assembly system." This invention is designed for use with agitated reaction vessels. The novel baffle system is characterized by its ability to be disassembled into easily-cleanable parts. It eliminates the need for independent fastening means such as screws, welds, or rivets. Additionally, the system allows for the easy interchangeability of its parts, making it a versatile solution for various industrial applications.

Career Highlights

Charles E Rainey, Jr. is associated with Graham Magnetics Incorporated, where he applies his expertise in developing innovative solutions. His work has been instrumental in advancing technologies that improve operational efficiency in the industry.

Conclusion

Charles E Rainey, Jr. exemplifies the spirit of innovation through his contributions to fastener-free assembly systems. His work not only simplifies assembly processes but also enhances the cleanliness and interchangeability of components in engineering applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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