Saratoga, CA, United States of America

Charles E Boettcher


Average Co-Inventor Count = 1.5

ph-index = 5

Forward Citations = 88(Granted Patents)


Location History:

  • Saratoga, CA (US) (1978 - 1983)
  • Sandy, UT (US) (1980 - 1984)

Company Filing History:


Years Active: 1978-1984

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8 patents (USPTO):Explore Patents

Title: Innovations of Charles E. Boettcher: Pioneering Advances in Dynamic MOS RAM

Introduction: Charles E. Boettcher, an accomplished inventor based in Saratoga, CA, has made significant contributions to the field of semiconductor technology. With a total of 8 patents to his name, Boettcher's work focuses on dynamic MOS (Metal-Oxide-Semiconductor) RAM and semiconductor capacitors, showcasing his expertise and innovation in integrated circuit design.

Latest Patents: Boettcher's recent patents include advancements in dynamic MOS RAM. One notable invention is a dynamic MOS RAM structure consisting of a plurality of storage cells connected to selection and data lines. Each storage cell is embedded with a storage capacitor that features first and second plates, with the second plate designed to connect to a reference potential terminal. The innovative design includes a first doped polysilicon conductive layer that is insulated from the semiconductor substrate, allowing for approximately 45% of the cell area to be utilized for charge storage. This optimization minimizes charge loss due to leakage in the depletion/junction area.

Another crucial patent details a method for fabricating semiconductor capacitors, particularly useful for creating memory cells in dynamic MOS random access memory. This technology employs a boron-implanted region to prevent surface N-type inversion, while an arsenic implant enhances N-type conductivity. The integration of these capacitors with MOS devices facilitates the development of efficient, single MOS memory cell structures for DRAM applications.

Career Highlights: Charles E. Boettcher has been a prominent figure at National Semiconductor Corporation, where he has leveraged his patent innovations to propel the company forward in the competitive semiconductor market. His technical acumen and inventive spirit have paved the way for breakthroughs in memory technology, underscoring his role as a leader in the industry.

Collaborations: Throughout his career, Boettcher has collaborated with esteemed colleagues, including Thomas Klein and Andrew G. Varadi. These partnerships have fostered an environment of creativity and shared knowledge, amplifying the impact of their collective innovations in semiconductor research and development.

Conclusion: Charles E. Boettcher is a testament to the spirit of innovation in technology. With 8 patents reflecting his dedication to advancing dynamic MOS RAM and semiconductor capacitors, Boettcher's contributions have left an indelible mark on the semiconductor realm. His ongoing work at National Semiconductor Corporation and collaborations with esteemed inventors continue to inspire future technological advancements.

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