San Marcos, TX, United States of America

Charles B Silman

This inventor holds 1 USPTO granted patent. Top assignee: Advanced Micro Devices Corporation. Active years: 2000.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Charles B Silman. Retrieved from https://idiyas.com/inventor/charles-b-silman

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 28(Granted Patents)


Company Filing History:


Years Active: 2000

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1 patent (USPTO):Explore Patents

Title: The Innovations of Charles B. Silman

Introduction

Charles B. Silman is an accomplished inventor based in San Marcos, TX (US). He has made significant contributions to the field of chemical vapor deposition systems. His innovative work has led to the development of a unique method that enhances the efficiency of gas flow control in vacuum chambers.

Latest Patents

Silman holds a patent for a "Chemical vapor deposition system and method employing a mass flow." This LPCVD system utilizes a mass flow controller to regulate the flow rate of gases from a reaction chamber to a vacuum pump. The design includes a secondary outlet conduit that allows gases to bypass a primary valve, ensuring a consistent flow rate. This innovation reduces the time required to evacuate the vacuum chamber, showcasing Silman's expertise in optimizing chemical processes.

Career Highlights

Silman is currently employed at Advanced Micro Devices Corporation, where he continues to push the boundaries of technology. His work at AMD has allowed him to collaborate with other talented professionals in the field, further enhancing his contributions to the industry.

Collaborations

One of his notable coworkers is Jesse C. Ramos, with whom he has likely shared insights and expertise in their respective areas of research and development.

Conclusion

Charles B. Silman's innovative contributions to chemical vapor deposition systems exemplify his dedication to advancing technology. His patent reflects a significant improvement in gas flow control, which is crucial for various applications in the semiconductor industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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