Company Filing History:
Years Active: 2005-2009
Title: Innovations of Charles A. Synder
Introduction
Charles A. Synder is a notable inventor based in Gilbert, Arizona. He has made significant contributions to the field of magnetoelectronics, particularly in the development of methods for contacting conducting layers in MRAM devices. With a total of two patents to his name, his work has had a considerable impact on the technology industry.
Latest Patents
One of his latest patents is titled "Methods for contacting conducting layers overlying magnetoelectronic elements of MRAM devices." This patent describes a method for contacting an electrically conductive layer that is positioned over a magnetoelectronics element. The process involves forming a memory element layer over a dielectric region, followed by the deposition of a first electrically conductive layer. A first dielectric layer is then deposited over this layer and patterned to create a masking layer. The first electrically conductive layer is etched using this masking layer, and a second dielectric layer is deposited over the first masking layer and the dielectric region. The method includes specific etching techniques that ensure the first masking layer is removed at a faster rate than the second dielectric layer, ultimately exposing the first electrically conductive layer.
Career Highlights
Throughout his career, Charles A. Synder has worked with prominent companies in the technology sector, including Freescale Semiconductor, Inc. and Everspin Technologies, Inc. His experience in these organizations has allowed him to refine his skills and contribute to innovative projects in the field of magnetoelectronics.
Collaborations
Charles has collaborated with notable professionals in his field, including Gregory W. Grynkewich and Brian R. Butcher. These collaborations have further enhanced his work and contributed to the advancements in MRAM technology.
Conclusion
Charles A. Synder's contributions to the field of magnetoelectronics through his patents and collaborations highlight his role as an influential inventor. His innovative methods for contacting conducting layers in MRAM devices continue to shape the future of technology.