Huizhou, China

Chaoyu Xiang

USPTO Granted Patents = 10 

 

Average Co-Inventor Count = 2.6

ph-index = 1


Location History:

  • Huizhou, CN (2021 - 2024)
  • Guangdong, CN (2024)

Company Filing History:


Years Active: 2021-2025

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10 patents (USPTO):Explore Patents

Title: Chaoyu Xiang: Innovator in Quantum Dot Light-Emitting Diodes

Introduction

Chaoyu Xiang is a prominent inventor based in Huizhou, China, known for his significant contributions to the field of quantum dot light-emitting diodes (QLEDs). With a total of 10 patents to his name, Xiang has been at the forefront of innovation in this cutting-edge technology.

Latest Patents

Among his latest patents, Xiang has developed a method for preparing quantum dot light-emitting diodes. This method involves several steps, including providing a substrate, which can be either a cathode substrate or an anode substrate equipped with a quantum dot light-emitting layer. The quantum dot light-emitting layer is positioned on the anode surface of the anode substrate. The substrate is then placed in an inert atmosphere containing a first gas, followed by the printing of an electron transport material ink on the substrate surface to create an electron transport layer. Additional film layers are prepared on the electron transport layer to complete the quantum dot light-emitting diode, which consists of an anode and a cathode arranged oppositely, with the quantum dot light-emitting layer situated between them.

Another notable patent by Xiang is a method for preparing quantum dots light-emitting diodes. This method includes providing a base plate with a quantum dots light-emitting layer on its upper surface. The base plate is immersed in

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