The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12391878 B1

Date of Patent:

Aug. 19, 2025

Filed:

Sep. 17, 2019

Method for preparing quantum dot light-emitting diodes

Applicant:

Tcl Technology Group Corporation, Guangdong, CN;

Inventors:

Jie Zhang, Guangdon, CN;

Chaoyu Xiang, Guangdong, CN;

Assignee:

TCL TECHNOLOGY GROUP CORPORATION, Huizhou, CN;

Attorney:

Primary Examiner:

Joshua Benitez Rosario

Assistant Examiner:

Christopher A Culbert

Int. Cl.

CPC ...

C09K 11/88 (2006.01); C09K 11/56 (2006.01); H10K 50/115 (2023.01); H10K 50/16 (2023.01); H10K 71/00 (2023.01); H10K 71/13 (2023.01); H10K 85/10 (2023.01); H10K 102/00 (2023.01); B82Y 20/00 (2011.01); H10K 50/17 (2023.01); H10K 71/40 (2023.01);

U.S. Cl.

CPC ...

C09K 11/883 (2013.01); C09K 11/565 (2013.01); H10K 71/135 (2023.02); H10K 85/1135 (2023.02); B82Y 20/00 (2013.01); H10K 50/115 (2023.02); H10K 50/16 (2023.02); H10K 50/171 (2023.02); H10K 71/00 (2023.02); H10K 71/40 (2023.02); H10K 2102/00 (2023.02); H10K 2102/331 (2023.02);

Abstract

A method for preparing a quantum dot light-emitting diode, including the following steps: providing a substrate, the substrate is a cathode substrate; or the substrate is an anode substrate provided with a quantum dot light-emitting layer, and the quantum dot light-emitting layer is arranged on the anode surface of the anode substrate; placing the substrate in an inert atmosphere containing a first gas, and printing an electron transport material ink on the substrate surface to prepare an electron transport layer; preparing other film layers on the electron transport layer to prepare a quantum dot light-emitting diode, the quantum dot light-emitting diode at least includes the following structure: an anode and a cathode arranged oppositely, a quantum dot light-emitting layer arranged between the anode and the cathode, and an electron transport layer arranged between the quantum dot light-emitting layer and the cathode.

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