Company Filing History:
Years Active: 2015
Title: Innovations of Chaobing Liang
Introduction
Chaobing Liang is a notable inventor based in Wuhan, China. He has made significant contributions to the field of memory storage technology, holding two patents that showcase his innovative approach to radiation-hardened storage solutions.
Latest Patents
Liang's latest patents include a radiation-hardened memory storage unit and a radiation-hardened storage unit. The radiation-hardened memory storage unit is designed to resist total ionizing dose effects and incorporates PMOS transistors. The radiation-hardened storage unit consists of a basic storage unit, a redundant storage unit, and a two-way feedback unit. The basic storage unit features four PMOS transistors, with the first two serving as read-out access transistors and the latter two as write-in access transistors. The redundant storage unit also includes four PMOS transistors, similarly divided into read-out and write-in access transistors. The two-way feedback unit is configured to create a feedback path between the storage node and the redundant storage node.
Career Highlights
Chaobing Liang is affiliated with Huazhong University of Science and Technology, where he continues to advance his research and development in memory storage technologies. His work has garnered attention for its potential applications in environments where radiation exposure is a concern.
Collaborations
Liang collaborates with esteemed colleagues such as Hongshi Sang and Wen Wang, contributing to a dynamic research environment that fosters innovation and technological advancement.
Conclusion
Chaobing Liang's contributions to radiation-hardened memory storage technology highlight his role as a leading inventor in this specialized field. His patents reflect a commitment to developing solutions that address critical challenges in memory storage applications.