Huazhong University of Science and Technology

Chaobing Liang

Tianxu Zhang

Jing Zhang

Hongshi Sang

Wen Wang

Yang Xie

Yajing Yuan

A radiation-hardened memory storage unit that is resistant to total ionizing done effects, the unit including PMOS transistors.

Radiation-hardened memory storage unit

A radiation-hardened storage unit, including a basic storage unit, a redundant storage unit, and a two-way feedback unit. The basic storage unit includes a first PMOS transistor, a second PMOS transistor, a third PMOS transistor, and a fourth PMOS transistor. The first PMOS transistor and the second PMOS transistor are read-out access transistors. The third PMOS transistor and the fourth PMOS transistor are write-in access transistors. The redundant storage unit includes a fifth PMOS transistor, a sixth PMOS transistor, a seventh PMOS transistor, and an eighth PMOS transistor. The fifth PMOS transistor and the sixth PMOS transistor are read-out access transistors. The seventh PMOS transistor and the eighth PMOS transistor are write-in access transistors. The two-way feedback unit is configured to form a feedback path between the storage node and the redundant storage node.

Radiation-hardened storage unit

Growing community of inventors

Wuhan, China

Chaobing Liang