Suzhou, Japan

Chao Yang

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Innoscience (Suzhou) Technology Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chao Yang. Retrieved from https://idiyas.com/inventor/chao-yang-i0wtur5o

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Chao Yang - Innovator in Nitride-Based Semiconductor Technology

Introduction

Chao Yang is a prominent inventor based in Suzhou, Japan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative work on nitride-based semiconductor devices. His expertise and dedication have led to the development of advanced technologies that are crucial for modern electronic applications.

Latest Patents

Chao Yang holds a patent for a nitride-based semiconductor device and method for manufacturing the same. This invention includes a first nitride-based semiconductor layer, a nitride-based multiple semiconductor layer, a gate electrode, a gate insulator layer, and a source electrode. The first nitride-based semiconductor layer features a drift region and at least two doped barrier regions that define an aperture in the drift region. The nitride-based multiple semiconductor layer structure is positioned over the first nitride-based semiconductor layer and contains a first heterojunction and a second heterojunction that are separated from each other. The gate electrode is integrated into the nitride-based multiple semiconductor layer structure and aligns vertically with the aperture in the drift region. The gate insulator layer is situated between the nitride-based multiple semiconductor layer structure and the gate electrode, while the source electrode is placed over the first nitride-based semiconductor layer and contacts the first and second heterojunctions of the nitride-based multiple semiconductor layer structure. Chao Yang has 1 patent to his name.

Career Highlights

Chao Yang is currently employed at Innoscience (Suzhou) Technology Co., Ltd. His work at this company has allowed him to further explore and develop his ideas in semiconductor technology. His contributions have been instrumental in advancing the capabilities of nitride-based devices, which are essential for various electronic applications.

Collaborations

Chao Yang has collaborated with notable colleagues, including Chunhua Zhou and Qiyue Zhao. These partnerships have fostered a creative environment that encourages innovation and the sharing of ideas.

Conclusion

Chao Yang is a key figure in the field of nitride-based semiconductor technology. His patent and ongoing work at Innoscience (Suzhou) Technology Co., Ltd. highlight his commitment to advancing this critical area of technology. His contributions will undoubtedly continue to influence the future of electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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