Chao-Wei Kuo

Title: Chao-Wei Kuo: Memory Device Innovation

Introduction

Chao-Wei Kuo is an inventor associated with Hsinchu City, Taiwan. His patent work includes a memory-device design and a method for manufacturing it.

Latest Patents

Kuo is named on one patent, “Memory Device and Manufacturing Method Thereof.” The invention describes a transistor with a gate layer, source region, and drain region. A first metal layer above the transistor includes a bit line electrically connected to the drain region. A second metal layer includes a gate metal layer connected to the transistor’s gate and a word line surrounding that gate metal layer. The design integrates transistor connections and memory-device wiring across multiple metal layers.

Career Highlights

Kuo is associated with Hon Hai Precision Industry Co., Ltd. His patent record reflects work on semiconductor memory structures and their manufacture.

Collaborations

Kuo’s listed coworker is fellow inventor Mu-Yi Lin.

Conclusion

Chao-Wei Kuo’s patent describes a layered memory-device architecture that connects transistor components through bit-line and word-line structures.