Singapore, Singapore

Chao Shen

This inventor holds 1 USPTO granted patent. Top assignee: Nanyang Technological University. Active years: 2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chao Shen. Retrieved from https://idiyas.com/inventor/chao-shen-lsqum9td

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Average Co-Inventor Count = 4.0

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Company Filing History:


Years Active: 2019

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1 patent (USPTO):Explore Patents

Title: Chao Shen: Innovator in Laser Cooling Technology

Introduction

Chao Shen is a prominent inventor based in Singapore, known for his groundbreaking work in the field of laser cooling technology. His innovative approach focuses on the cooling of perovskite materials, which has significant implications for various applications in materials science and engineering.

Latest Patents

Chao Shen holds a patent titled "Laser cooling of organic-inorganic lead halide perovskites." This invention relates to the cooling of matter using laser emission, specifically targeting the cooling of perovskite materials through laser techniques. His work in this area has the potential to enhance the performance and efficiency of devices utilizing these materials.

Career Highlights

Chao Shen is affiliated with Nanyang Technological University, where he contributes to research and development in advanced materials. His expertise in laser cooling and perovskite technology positions him as a key figure in the academic and scientific community.

Collaborations

Chao has collaborated with notable colleagues, including Qihua Xiong and Son Tung Ha, to further advance research in his field. Their combined efforts aim to explore new frontiers in material science and technology.

Conclusion

Chao Shen's contributions to laser cooling technology and his innovative patent highlight his role as a leading inventor in Singapore. His work not only advances scientific knowledge but also paves the way for future innovations in material applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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