Taoyuan County, Taiwan

Chao-Hsun Wang

This inventor holds 1 USPTO granted patent and 2 published patent applications. Top assignee: Taiwan Semiconductor Manufacturing Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chao-Hsun Wang. Retrieved from https://idiyas.com/inventor/chao-hsun-wang-1fh6zhss

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Chao-Hsun Wang: Innovator in Semiconductor Technology

Introduction

Chao-Hsun Wang is a prominent inventor based in Taoyuan County, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the area of contact formation methods. His innovative approach has led to the development of a patented method that enhances the efficiency of metal gate contacts in semiconductor devices.

Latest Patents

Chao-Hsun Wang holds a patent for a "Contact formation method and related structure." This patent describes a method for forming a via-first metal gate contact. The process involves depositing a first dielectric layer over a substrate with a gate structure that includes a metal gate layer. An opening is created within the first dielectric layer to expose part of the substrate, followed by the deposition of a first metal layer within this opening. A second dielectric layer is then applied over both the first dielectric layer and the first metal layer. The etching of these layers results in a gate via opening that reveals the metal gate layer. The method further includes the removal of a portion of the second dielectric layer to create a contact opening that exposes the first metal layer. Ultimately, the gate via and contact openings merge to form a composite opening, allowing for the deposition of a second metal layer that connects the metal gate layer to the first metal layer.

Career Highlights

Chao-Hsun Wang is currently employed at Taiwan Semiconductor Manufacturing Co., Ltd., a leading company in the semiconductor industry. His work focuses on advancing technologies that improve the performance and reliability of semiconductor devices. With a patent portfolio that includes innovative methods, Wang has established himself as a key figure in his field.

Collaborations

Chao-Hsun Wang has collaborated with notable colleagues such as Wang-Jung Hsueh and Kuo-Yi Chao. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas within the semiconductor community.

Conclusion

Chao-Hsun Wang's contributions to semiconductor technology through his patented methods demonstrate his commitment to innovation in the field. His work not only enhances the efficiency of semiconductor devices but also positions him as a leading inventor in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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