Taoyuan, Taiwan

Chao-Cheng Ku


Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Chao-Cheng Ku: Innovator in Memory Storage Technology

Introduction

Chao-Cheng Ku is a notable inventor based in Taoyuan, Taiwan. He has made significant contributions to the field of memory storage technology. His innovative work has led to the development of a unique layout structure that enhances the performance of memory devices.

Latest Patents

Chao-Cheng Ku holds a patent for a layout structure of differential lines, a memory storage device, and a memory control circuit unit. This patent describes a layout structure that includes a wiring layer, a first wire, and a second wire. The first wire is designed to transmit a first differential signal, while the second wire transmits a second differential signal. The design features bending structures at both ends of the wires, which optimize the connection to electrical components.

Career Highlights

Chao-Cheng Ku is currently employed at Phison Electronics Corporation, a leading company in the memory storage industry. His work at Phison has allowed him to apply his innovative ideas in practical applications, contributing to the advancement of memory technology.

Collaborations

Chao-Cheng Ku has collaborated with talented coworkers, including Kang-Yun Yang and Yang-Tse Hung. Their combined expertise has fostered a creative environment that encourages innovation and the development of cutting-edge technologies.

Conclusion

Chao-Cheng Ku's contributions to memory storage technology exemplify the impact of innovative thinking in the field. His patent and work at Phison Electronics Corporation highlight his role as a key player in advancing memory device technology.

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