Phison Electronics Corporation

Chao-Cheng Ku

Yang-Tse Hung

Kang-Yun Yang

Li-Yuan Lee

A layout structure of differential lines, a memory storage device and a memory control circuit unit are provided. The layout structure of the differential lines includes a wiring layer, a first wire and a second wire. The first wire is arranged on the wiring layer and configured to transmit a first differential signal. The second wire is arranged on the wiring layer and configured to transmit a second differential signal. A first end of the first wire and a first end of the second wire are coupled to a first electrical component. A second end of the first wire and a second end of the second wire are coupled to a second electrical component. The first end of the first wire has a first bending structure. One of the second end of the first wire and the second end of the second wire has a second bending structure.

Growing community of inventors

Taoyuan, Taiwan

Chao-Cheng Ku