Yongin-si, South Korea

Changyeon Hwang

This inventor holds 1 USPTO granted patent. Top assignees: Nsys Corporation, Samsung Sdi., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Changyeon Hwang. Retrieved from https://idiyas.com/inventor/changyeon-hwang-2wvzf8ue

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Changyeon Hwang and Battery Separator Inspection

Introduction

Changyeon Hwang is an inventor based in Yongin-si, South Korea. His patent work includes a system designed to identify black spots in separators used in rechargeable battery cells.

Latest Patents

Hwang is associated with 1 patent, titled “System for Finding Black Spots in a Separator from a Rechargeable Battery Cell.” The system processes a separator sample using a winder and rewinder, then removes foreign material before imaging the separator. A first camera captures an image of areas where black spots may be present and records their positions. A second camera then examines selected areas to capture images of suspected black spots and other foreign material. Deep-learning software analyzes both sets of images, and a sorting unit displays the positions of spots identified through the secondary selection process.

Career Highlights

Hwang’s listed company affiliations include Samsung SDI Co., Ltd. and NSYS Corporation. His patent describes an inspection approach that combines image capture, foreign-material removal, and deep learning to help identify defects in battery separators.

Collaborations

Hwang’s listed coworkers include Seungwoo Lyu and Jungyi Yu.

Conclusion

Changyeon Hwang’s patent focuses on using imaging and deep learning to detect and locate black spots in rechargeable battery separators, reflecting an application of automated inspection to battery manufacturing.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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