This inventor holds 1 USPTO granted patent. Top assignee: Semiconductor Manufacturing International (Shanghai) Corporation. Active years: 2017.
Company Filing History:
Years Active: 2017
Title: Changwei Yin: Innovator in Semiconductor Technology
Introduction
Changwei Yin is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique patent that enhances memory circuits.
Latest Patents
Changwei Yin holds a patent for a "Selected gate driver circuit in memory circuits, and control device and control method thereof." This invention includes a selected gate (SG) driver circuit, which comprises a first NMOS transistor, a second NMOS transistor, a third NMOS transistor, a first PMOS transistor, and a second PMOS transistor. The design intricately connects various components to optimize the performance of memory circuits.
Career Highlights
Changwei Yin is currently employed at Semiconductor Manufacturing International (Shanghai) Corporation. His role at this leading semiconductor company allows him to apply his expertise in developing advanced technologies. With a focus on innovation, he continues to push the boundaries of what is possible in the semiconductor industry.
Collaborations
Changwei has collaborated with notable colleagues, including Guangyan Luo and Hao Ni. Their teamwork has fostered an environment of creativity and innovation, contributing to the success of their projects.
Conclusion
Changwei Yin's contributions to semiconductor technology through his patent and work at Semiconductor Manufacturing International (Shanghai) Corporation highlight his role as a key innovator in the field. His dedication to advancing technology continues to inspire future developments in memory circuits.