Company Filing History:
Years Active: 2021
Title: Changtai Xia: Innovator in Gallium Oxide Crystalline Materials
Introduction
Changtai Xia is a notable inventor based in Shanghai, China. He has made significant contributions to the field of materials science, particularly in the development of doped gallium oxide crystalline materials. His innovative work has implications for various electronic and optoelectronic applications.
Latest Patents
Changtai Xia holds a patent for a "Doped gallium oxide crystalline material and preparation method and application thereof." This invention involves a Group VB element doped with a β-gallium oxide crystalline material. The series doped with the β-GaO crystalline material is monoclinic, with a space group of C2/m. The resistivity of this material ranges from 2.0×10 to 1×10 Ω·cm, and the carrier concentration is between 5×10 to 7×10/cm. The preparation method includes mixing MO and GaO with a purity of 4N or more at a molar ratio of (0.000000001-0.01):(0.999999999-0.99), followed by crystal growth. This invention enables the preparation of a high-conductivity β-GaO crystalline material with n-type conductivity characteristics, providing a foundation for applications in electrically powered electronic devices, optoelectronic devices, photocatalysts, or conductive substrates.
Career Highlights
Changtai Xia has worked with prestigious organizations, including the Chinese Academy of Sciences and Hangzhou Fujia Gallium Technology Co. Ltd. His experience in these institutions has allowed him to refine his expertise in materials science and contribute to groundbreaking research.
Collaborations
Some of his notable coworkers include Qinglin Sai and Wei Zhou. Their collaborative efforts have further advanced the research and development of innovative materials.
Conclusion
Changtai Xia's contributions to the field of gallium oxide crystalline materials highlight his role as a significant inventor. His work not only enhances our understanding of material properties but also paves the way for future technological advancements.