The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2021
Filed:
Jul. 10, 2019
Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, CN;
Changtai Xia, Shanghai, CN;
Qinglin Sai, Shanghai, CN;
Wei Zhou, Shanghai, CN;
Hongji Ql, Shanghai, CN;
Abstract
A Group VB element doped with a β-gallium oxide crystalline material, and a preparation method and application thereof. The series doped with the β—GaOcrystalline material is monoclinic, the space group is C2/m, the resistivity is in the range of 2.0×10to 1×10Ω·cm, and/or the carrier concentration is in the range of 5×10to 7×10/cm. The preparation method comprises steps of: mixing MOand GaOwith a purity of 4N or more at molar ratio of (0.000000001-0.01):(0.999999999-0.99); an then performing crystal growth. The present invention can prepare a high-conductivity β-GaOcrystalline material with n-type conductivity characteristics by conventional processes, providing a basis for applications thereof to electrically powered electronic devices, optoelectronic devices, photocatalysts or conductive substrates.