Changlong Huo

Title: Changlong Huo: Innovator in Semiconductor Technology

Introduction

Changlong Huo is a prominent inventor based in Jiangsu, China. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent. His work is recognized for its potential impact on various electronic applications.

Latest Patents

Changlong Huo holds a patent for a "Silicon on insulator integrated high-current N type combined semiconductor device." This invention includes a N type drift region, a P type deep well, an N type buffer well, a P type drain region, an N type source region, and a P type body contact region. Additionally, it features a field oxide layer and a gate oxide layer arranged on a silicon surface, along with a polysilicon lattice on the gate oxide layer. The device also incorporates an N type triode drift region, a P type deep well, an N type triode buffer well, a P type emitting region, an N type base region, an N type source region, and a P type body contact region.

Career Highlights

Changlong Huo is affiliated with Southeast University, where he continues to advance his research and development in semiconductor technologies. His work has garnered attention for its innovative approach and practical applications in the industry.

Collaborations

Some of his notable coworkers include Longxing Shi and Qinsong Qian, who contribute to the collaborative efforts in their research projects.

Conclusion

Changlong Huo's contributions to semiconductor technology through his patent demonstrate his innovative spirit and commitment to advancing the field. His work at Southeast University continues to inspire future developments in electronics.