The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2014
Filed:
Jul. 11, 2011
Longxing Shi, Jiangsu, CN;
Qinsong Qian, Jiangsu, CN;
Changlong Huo, Jiangsu, CN;
Weifeng Sun, Jiangsu, CN;
Shengli LU, Jiangsu, CN;
Longxing Shi, Jiangsu, CN;
Qinsong Qian, Jiangsu, CN;
Changlong Huo, Jiangsu, CN;
Weifeng Sun, Jiangsu, CN;
Shengli Lu, Jiangsu, CN;
Southeast University, , CN;
Abstract
A silicon on insulator N type semiconductor device, includes a N type drift region, a P type deep well, an N type buffer well, a P type drain region, an N type source region and a P type body contact region; a field oxide layer and a gate oxide layer arranged on a silicon surface, and a polysilicon lattice arranged on the gate oxide layer; and an N type triode drift region, a P type deep well, an N type triode buffer well, a P type emitting region, an N type base region, an N type source region and a P type body contact region; a field oxide layer and a gate oxide layer arranged on a silicon surface, and a polysilicon lattice arranged on the gate oxide layer.