This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Lam Research Corporation. Active years: 2026.
Company Filing History:
Years Active: 2026
Title: Changhe Guo: Innovator in Process Chamber Technology
Introduction
Changhe Guo is a notable inventor based in Tigard, Oregon. He has made significant contributions to the field of process chamber technology. His innovative approach has led to the development of a unique method aimed at enhancing the efficiency of dielectric film layers.
Latest Patents
Changhe Guo holds 1 patent for his invention titled "Chamber-accumulation extension via in-situ passivation." This patent discloses a method to reduce film shedding from components internal to a process chamber. The method involves forming a dielectric film layer on each of a successive plurality of substrates within the process chamber. After a predetermined number of substrates have had the dielectric film layers formed, an undoped-silicate glass (USG) film is created on the internal components of the process chamber to passivate the accumulated levels of the dielectric film layers. This innovative approach addresses a critical issue in the manufacturing process.
Career Highlights
Changhe Guo is currently employed at Lam Research Corporation, a leading company in semiconductor manufacturing equipment. His work at Lam Research has allowed him to apply his expertise in developing advanced technologies that improve manufacturing processes.
Collaborations
Changhe collaborates with Zhiyuan Fang, a fellow innovator in the field. Their partnership has contributed to the advancement of technologies within their organization.
Conclusion
Changhe Guo's contributions to process chamber technology exemplify the impact of innovative thinking in the semiconductor industry. His patent and work at Lam Research Corporation highlight his commitment to improving manufacturing processes.