This inventor holds 2 USPTO granted patents. Top assignee: Samsung Electronics Co., Ltd.. Active years: 1995-1997.
Company Filing History:
Years Active: 1995-1997
Title: Changgyu Kim: Innovator in Semiconductor Technology
Introduction
Changgyu Kim is a prominent inventor based in Suwon, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the fabrication of interlayer-dielectric films. With a total of 2 patents to his name, his work has had a substantial impact on the industry.
Latest Patents
Changgyu Kim's latest patents include a method for fabricating a doped interlayer-dielectric film of semiconductor. This innovative method involves a surface treatment of borophosphosilicate glass (BPSG) dielectric film using plasma treatment with various gases such as N₂O, N₂ + NH₃, N₂, O₂, or O₃. This process reduces erosion caused by H₂SO₄ boiling or humidity absorption, allowing for reflow processing at temperatures ideally below 850°C, resulting in an interlayer dielectric film of excellent planarity. Another notable patent is the method for fabricating an interlayer-dielectric film of a semiconductor, which also utilizes surface treatment techniques to achieve similar results.
Career Highlights
Changgyu Kim is currently employed at Samsung Electronics Co., Ltd., where he continues to advance semiconductor technology. His expertise and innovative approaches have positioned him as a key figure in the development of advanced materials for electronic devices.
Collaborations
Some of his notable coworkers include Changki Hong and Uin Chung, who have collaborated with him on various projects within the semiconductor field.
Conclusion
Changgyu Kim's contributions to semiconductor technology through his patents and work at Samsung Electronics Co., Ltd. highlight his role as an influential inventor in the industry. His innovative methods for fabricating interlayer-dielectric films are paving the way for advancements in electronic device manufacturing.