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For the Inventor, By the Inventor

Fishkill, NY, United States of America

Chang-Ming Hsieh

USPTO Granted Patents = 34

Average Co-Inventor Count = 3.7

ph-index = 17

Forward Citations = 1,190(Granted Patents)


Location History:

  • Dutchess County, NY (US) (1998 - 1999)
  • Fishkill, NY (US) (1990 - 2000)

Company Filing History:

goldMedal33 out of 164,108 
 
International Business Machines Corporation
 patents
silverMedal1 out of 832,680 
Other
 patents

Years Active: 1990-2000

where 'Filed Patents' based on already Granted Patents

34 patents (USPTO):
1. 6144081 - Method to suppress subthreshold leakage due to sharp isolation corners (2000-11-07),
2. 6107141 - Flash EEPROM (2000-08-22),
3. 5962895 - SOI transistor having a self-aligned body contact (1999-10-05),
4. 5910912 - Flash EEPROM with dual-sidewall gate (1999-06-08),
5. 5874764 - Modular MOSFETS for high aspect ratio applications (1999-02-23),
6. 5774411 - Methods to enhance SOI SRAM cell stability (1998-06-30),
7. 5729039 - SOI transistor having a self-aligned body contact (1998-03-17),
8. 5721144 - Method of making trimmable modular MOSFETs for high aspect ratio (1998-02-24),
9. 5567553 - Method to suppress subthreshold leakage due to sharp isolation corners (1996-10-22),
10. 5528062 - High-density DRAM structure on soi (1996-06-18),
11. 5521399 - Advanced silicon on oxide semiconductor device structure for BiCMOS (1996-05-28),
12. 5484738 - Method of forming silicon on oxide semiconductor device structure for (1996-01-16),
13. 5466625 - Method of making a high-density DRAM structure on SOI (1995-11-14),
14. 5446312 - Vertical-gate CMOS compatible lateral bipolar transistor (1995-08-29),
15. 5405795 - Method of forming a SOI transistor having a self-aligned body contact (1995-04-11),

Title: Chang-Ming Hsieh: Pioneering Inventor from Fishkill, NY

Introduction: Chang-Ming Hsieh is a distinguished inventor hailing from Fishkill, NY, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Chang-Ming Hsieh holds several patents in the areas of semiconductor technology, renewable energy, and artificial intelligence, showcasing his versatility and forward-thinking approach.

Career Highlights: With a career spanning over two decades, Chang-Ming Hsieh has worked with leading tech companies, research institutions, and universities, consistently pushing the boundaries of what is possible in the realm of invention.

Collaborations: Throughout his career, Chang-Ming Hsieh has collaborated with top engineers, scientists, and researchers from around the world, fostering a culture of innovation and excellence in all his projects.

Conclusion: Chang-Ming Hsieh's passion for innovation, coupled with his technical expertise, has solidified his reputation as a trailblazer in the world of inventions, inspiring the next generation of inventors to dream big and think outside the box.

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