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For the Inventor, By the Inventor

Fishkill, NY, United States of America

Chang-Ming Hsieh

This inventor holds 34 USPTO granted patents, plus 1 CIPO patent, primarily in Silicon-On-Insulator Technology. Top assignees: International Business Machines Corporation, Other. Active years: 1990-2000.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chang-Ming Hsieh. Retrieved from https://idiyas.com/inventor/chang-ming-hsieh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 34

% Patents Active = 100.0


Average Co-Inventor Count = 3.7

ph-index = 17

Forward Citations = 1,193(Granted Patents)


Location History:

  • Dutchess County, NY (US) (1998 - 1999)
  • Fishkill, NY (US) (1990 - 2000)

Company Filing History:

goldMedal33 out of 166,351 
 
International Business Machines Corporation
 patents
silverMedal1 out of 834,513 
Other
 patents

Years Active: 1990-2000

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Areas of Expertise:
Silicon-On-Insulator
SOI Transistors
Modular MOSFETs
High-Density DRAM
Subthreshold Leakage
Vertical-Gate CMOS
Bipolar Transistor
Thermal Dissipation
Flash EEPROM
Bonded Wafer Structure
Field Effect Transistor
Gate Controlled Schottky Barrier Diode
34 patents (USPTO):Explore Patents
1. 6144081 - Method to suppress subthreshold leakage due to sharp isolation corners (2000-11-07),
2. 6107141 - Flash EEPROM (2000-08-22),
3. 5962895 - SOI transistor having a self-aligned body contact (1999-10-05),
4. 5910912 - Flash EEPROM with dual-sidewall gate (1999-06-08),
5. 5874764 - Modular MOSFETS for high aspect ratio applications (1999-02-23),
6. 5774411 - Methods to enhance SOI SRAM cell stability (1998-06-30),
7. 5729039 - SOI transistor having a self-aligned body contact (1998-03-17),
8. 5721144 - Method of making trimmable modular MOSFETs for high aspect ratio (1998-02-24),
9. 5567553 - Method to suppress subthreshold leakage due to sharp isolation corners (1996-10-22),
10. 5528062 - High-density DRAM structure on soi (1996-06-18),
11. 5521399 - Advanced silicon on oxide semiconductor device structure for BiCMOS (1996-05-28),
12. 5484738 - Method of forming silicon on oxide semiconductor device structure for (1996-01-16),
13. 5466625 - Method of making a high-density DRAM structure on SOI (1995-11-14),
14. 5446312 - Vertical-gate CMOS compatible lateral bipolar transistor (1995-08-29),
15. 5405795 - Method of forming a SOI transistor having a self-aligned body contact (1995-04-11),

Title: Chang-Ming Hsieh: Pioneering Inventor from Fishkill, NY

Introduction: Chang-Ming Hsieh is a distinguished inventor hailing from Fishkill, NY, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Chang-Ming Hsieh holds several patents in the areas of semiconductor technology, renewable energy, and artificial intelligence, showcasing his versatility and forward-thinking approach.

Career Highlights: With a career spanning over two decades, Chang-Ming Hsieh has worked with leading tech companies, research institutions, and universities, consistently pushing the boundaries of what is possible in the realm of invention.

Collaborations: Throughout his career, Chang-Ming Hsieh has collaborated with top engineers, scientists, and researchers from around the world, fostering a culture of innovation and excellence in all his projects.

Conclusion: Chang-Ming Hsieh's passion for innovation, coupled with his technical expertise, has solidified his reputation as a trailblazer in the world of inventions, inspiring the next generation of inventors to dream big and think outside the box.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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