Los Altos, CA, United States of America

Chang-Man Park

This inventor holds 2 USPTO granted patents. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2014-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chang-Man Park. Retrieved from https://idiyas.com/inventor/chang-man-park-iku985xr

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.7

ph-index = 2

Forward Citations = 32(Granted Patents)


Company Filing History:


Years Active: 2014-2015

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2 patents (USPTO):Explore Patents

Title: Chang-Man Park: Innovator in Magnetic Junction Technology

Introduction

Chang-Man Park is a notable inventor based in Los Altos, California. He has made significant contributions to the field of magnetic junction technology, holding 2 patents that enhance the performance of magnetic memory devices. His work is pivotal in advancing the capabilities of magnetic devices used in various applications.

Latest Patents

Chang-Man Park's latest patents include a method and system for providing magnetic junctions with improved characteristics. This invention outlines a method and apparatus for creating magnetic memory that includes magnetic junctions on a substrate. The design features an RIE chamber and an ion milling chamber, allowing the magnetic memory to be transferred between the chambers without exposure to ambient conditions. The method involves forming magnetic junction layers and a hard mask layer, followed by ion milling to define the magnetic junctions.

Another significant patent by Park is a method and system for providing magnetic junctions with engineered perpendicular magnetic anisotropy. This invention describes a magnetic junction that includes a reference layer, a nonmagnetic spacer layer, and a free layer. The free layer is designed to have engineered perpendicular magnetic anisotropy, enabling it to switch between multiple stable magnetic states when a write current is applied.

Career Highlights

Chang-Man Park is currently employed at Samsung Electronics Co., Ltd., where he continues to innovate in the field of magnetic technologies. His work has been instrumental in developing advanced magnetic junctions that improve the efficiency and performance of magnetic devices.

Collaborations

Throughout his career, Chang-Man Park has collaborated with talented individuals such as Dustin William Erickson and Mohamad Towfik Krounbi. These collaborations have contributed to the successful development of his innovative technologies.

Conclusion

Chang-Man Park is a distinguished inventor whose work in magnetic junction technology has made a significant impact on the field. His patents reflect a commitment to advancing magnetic memory devices, showcasing his expertise and innovative spirit.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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