Meishan, China

Chang-Hsing Lin

This inventor holds 1 USPTO granted patent. Top assignee: Kingston Technology Corporation. Active years: 2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chang-Hsing Lin. Retrieved from https://idiyas.com/inventor/chang-hsing-lin-1359s0io

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 9(Granted Patents)


Company Filing History:


Years Active: 2013

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1 patent (USPTO):Explore Patents

Title: Chang-Hsing Lin: Innovator in Portable Memory Technology

Introduction

Chang-Hsing Lin is a notable inventor based in Meishan, China. He has made significant contributions to the field of portable memory devices. With a focus on innovation, he has secured a patent that showcases his expertise and creativity.

Latest Patents

Chang-Hsing Lin holds a patent for a "Housing for a Portable Memory Device." This invention reflects his commitment to enhancing the functionality and design of memory storage solutions. He has achieved 1 patent in this area, demonstrating his capability as an inventor.

Career Highlights

Lin is currently employed at Kingston Technology Corporation, a leading company in memory products. His role at Kingston allows him to work on cutting-edge technology and contribute to advancements in the industry. His work is instrumental in developing solutions that meet the evolving needs of consumers.

Collaborations

Chang-Hsing Lin collaborates with talented coworkers, including Ching Hung Chen and Hsi Ming Tsai. Together, they work on innovative projects that push the boundaries of technology and improve product offerings.

Conclusion

Chang-Hsing Lin is a dedicated inventor whose work in portable memory technology has made a significant impact. His patent and contributions at Kingston Technology Corporation highlight his role in advancing the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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