Icheon-si, South Korea

Chang Hee Lee

This inventor holds 1 USPTO granted patent. Top assignee: Skhynix Inc.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chang Hee Lee. Retrieved from https://idiyas.com/inventor/chang-hee-lee-39ilhf86

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Chang Hee Lee: Innovator in Memory Device Technology

Introduction

Chang Hee Lee is a notable inventor based in Icheon-si, South Korea. He has made significant contributions to the field of memory devices, particularly through his innovative patent. His work is recognized for enhancing the efficiency and functionality of memory technology.

Latest Patents

Chang Hee Lee holds a patent for a "Memory device including charge pump for generating voltage and operating method thereof." This invention involves a memory device that features a memory cell array with multiple planes. It includes a charge pump designed to generate an operating voltage for operations on these planes, utilizing a first clock signal. The device also incorporates page buffers that store pass data to indicate the completion of operations across the planes. An operation control circuit manages the charge pump's voltage generation based on the pass data received, adjusting to a second clock signal with a longer cycle than the first.

Career Highlights

Chang Hee Lee is associated with SK Hynix Inc., a leading company in the semiconductor industry. His role at the company has allowed him to contribute to advancements in memory technology, showcasing his expertise and innovative spirit.

Collaborations

Chang Hee Lee collaborates with fellow inventor Won Jae Choi, further enhancing the innovative efforts within their field.

Conclusion

Chang Hee Lee's contributions to memory device technology exemplify the impact of innovation in the semiconductor industry. His patent reflects a commitment to advancing technology and improving operational efficiency in memory devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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