Chang-Chih Lin

Title: Chang-Chih Lin and Low-Temperature Hydrophobic Silicon Dioxide

Introduction

Chang-Chih Lin is an inventor associated with National Taiwan University of Science and Technology in Taoyuan, Taiwan. His patent work concerns forming hydrophobic silicon dioxide layers for use in organic thin-film transistors.

Latest Patents

Lin is named on 1 patent: “Methods of Forming Hydrophobic Silicon Dioxide Layer and Forming Organic Thin Film Transistor.” The invention describes forming a hydrophobic silicon dioxide layer on a substrate using plasma chemical vapor deposition. The process introduces tetraethyl orthosilicate (TEOS) and an oxygen-containing gas at a reaction temperature between 25°C and 150°C.

The patent also describes an organic thin-film transistor that uses the hydrophobic silicon dioxide layer as its gate insulator. By forming the layer directly at low temperature, the method avoids conventional surface-modification treatment, simplifying the process and reducing costs.

Career Highlights

Lin’s patent highlights an approach to producing a functional transistor insulating layer through low-temperature deposition. The disclosed method combines hydrophobic silicon dioxide formation with organic thin-film transistor fabrication.

Collaborations

Lin’s listed coworkers include Ping-Cheng Chiu and Ching-Lin Fan. The patent information provided identifies National Taiwan University of Science and Technology as his associated organization.

Conclusion

Chang-Chih Lin’s patent focuses on a simplified, low-temperature method for forming hydrophobic silicon dioxide layers and incorporating them into organic thin-film transistors.